英诺迅 YP3236W Datasheet

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Features

■ 300~1000MHz Frequency Range

■ 3.3V~5.0V Operation

■ 32dB Gain

■ 36dBm P1dB @VCC=5V

■ 250mA Quiescent Current

■ >20dB Input Return Loss

■ Integrated Output Power Detector

Applications

■ Wireless data communication

■ CDMA

■ GSM

■ RFID

■ CMMB

■ TETRA

Product Description

The YP3236W is a three-stage high-gain power amplifier optimized for the applications in bands from 300MHz to 1000MHz. The device is manufactured on an advanced InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process. This amplifier provides a typical gain of 32dB and P1dB power of 36 dBm, typical bias condition is 5.0V at 250 mA. The input are internally matched to 50Ω and the output require a minimum of external matching components to cover the entire 300MHz to 1000MHz. The YP3236W is assembled in a 16-pin, 4×4mm2, QFN package. It is internally integrated with ESD protection unit.